metal oxide semiconductor field effect transistor is the full form for this technology this is now mostly used in many electronic devices as this is much faster than the previous technology . It is a voltage controlled power device that is capable of handling large electrical current flow.

Answered by archana , an ibibo Specialist, at 10:07 PM on March 04, 2008

A MOSFET stands for "Metal Oxide Semiconductor Field Effect Transistor" is a semiconductor device which is used in the field of power electronics.

Answered by Ashish , an ibibo Wizard, at 9:09 PM on February 27, 2008

hi harish, A MOSFET is a voltage controlled power device that is capable of handling large electrical current flow.

Answered by Saurabh , an ibibo Master, at 11:57 AM on February 20, 2008

The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is by far the most common field-effect transistor in both digital and analog circuits. The MOSFET is composed of a channel of n-type or p-type semiconductor material (see article on semiconductor devices), and is accordingly called an NMOSFET or a PMOSFET (also commonly nMOSFET, pMOSFET).

The 'metal' in the name is now often a misnomer because the previously metal gate material is now a layer of polysilicon (polycrystalline silicon; why polysilicon is used will be explained below). Previously aluminium was used as the gate material until the 1980s when polysilicon became dominant, owing to its capability to form self-aligned gates.

To overcome power consumption increase due to gate current leakage, high-κ dielectric is replacing silicon dioxide as the gate insulator, and metal gates are making a comeback by replacing polysilicon

source :
http://en.wikipedia.org/wiki/MOS FET

Answered by Smarty , an ibibo Master, at 1:28 AM on February 20, 2008

well Harish, MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor – electronically vary’s the width of a channel along which charge carriers,A common type of transistor in which charge carriers, such as electrons, flow along channels. The width of the channel, which determines how well the device conducts, is controlled by an electrode called the gate, separated from the channel by a thin layer of oxide insulation.

Answered by Romi , an ibibo Master, at 9:52 PM on February 19, 2008

hi harish ,[MOSFET ]Metal Oxide Semiconductor Field Effect Transistors have a higher switching speed than bipolar transistors and generate very little heat. MOSFETs offer fast response and high efficiency.

Answered by Uttam , an ibibo Master, at 12:29 PM on February 19, 2008

The metal oxide semiconductor field effect
transistor or MOSFET is based on the original field-effect transistor introduced in the
70s. The invention of the power MOSFET was partly driven by the limitations of bipolar power junction transistors (BJTs) which, until recently, was the device of choice in power
electronics applications.

In 1960, Dawon Kahng and Martin M. (John) Atalla at Bell Labs invented MOSFET. Operationally and structurally different from bipolar junction transistor,[BJT] the MOSFET was made by putting an insulating layer on the surface of the semiconductor and then placing a metallic gate electrode on that. It used crystalline silicon for the semiconductor and a thermally oxidized layer of silicon dioxide for the insulator. The silicon MOSFET did not generate localized electron traps at the interface between the silicon and its native oxide layer, and thus was inherently free from the trapping and scattering of carriers that had impeded the performance of earlier field-effect transistors. Following the (expensive) development of clean rooms to reduce contamination to levels never before thought necessary, and of photolithography and the planar process to allow circuits to be made in very few steps, the Si − SiO2 system possessed such technical attractions as low cost of production (on a per circuit basis) and ease of integration. Largely because of these two factors, the MOSFET has become the most widely used type of integrated circuit.

The principal reason for the success of the MOSFET was the development of digital CMOS logic,[20] which uses p- and n-channel MOSFETs as building blocks. Overheating is a major concern in integrated circuits since ever more transistors are packed into ever smaller chips. CMOS logic reduces power consumption because no current flows (ideally), and thus no power is consumed, except when the inputs to logic gates are being switched. CMOS accomplishes this current reduction by complementing every nMOSFET with a pMOSFET and connecting both gates and both drains together. A high voltage on the gates will cause the nMOSFET to conduct and the pMOSFET not to conduct and a low voltage on the gates causes the reverse. During the switching time as the voltage goes from one state to another, both MOSFETs will conduct briefly. This arrangement greatly reduces power consumption and heat generation.

Answered by Kannan , an ibibo Specialist, at 11:36 AM on February 19, 2008

MOSFET stands for : Metal Oxide Semiconductor Field Effect Transistor. This is a type of transistor where a conductive electrode is separated from the semiconductor surface by an insulating layer, typically silicon dioxide.

Answered by Sunita , an ibibo Advisor, at 12:13 AM on February 19, 2008

metal oxide semiconductor field effect transistor. This is the better version of a transistor and also consist of three pins.
This yields better output and produces lesser heat for maximum efficiency

Answered by Rahul , an ibibo Citizen, at 10:38 PM on February 18, 2008

The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is by far the most common field-effect transistor in both digital and analog circuits. The MOSFET is composed of a channel of n-type or p-type semiconductor material (see article on semiconductor devices), and is accordingly called an NMOSFET or a PMOSFET (also commonly nMOSFET, pMOSFET).

The 'metal' in the name is now often a misnomer because the previously metal gate material is now a layer of polysilicon (polycrystalline silicon; why polysilicon is used will be explained below). Previously aluminium was used as the gate material until the 1980s when polysilicon became dominant, owing to its capability to form self-aligned gates.

To overcome power consumption increase due to gate current leakage, high-κ dielectric is replacing silicon dioxide as the gate insulator, and metal gates are making a comeback by replacing polysilicon

Answered by sanjiv dhir , an ibibo Specialist, at 9:38 PM on February 18, 2008